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| www..com ISSUED DATE :2005/02/18 REVISED DATE : G S A1576 A Description Features & Complements the GSC4081 P NP E PITAX IAL PL ANAR T RANS ISTO R The GSA1576A is designed for use in driver stage of AF amplifier and general purpose amplification. Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = 25 : Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55~+150 -60 -50 -6 -150 225 V V V mA mW Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob at Ta = 25 : Min. -60 -50 -6 120 Typ. 140 4.0 Max. -100 -100 -500 560 5.0 MHz pF Unit V V V nA nA mV IC=-50uA IC=-1mA IE=-50uA VCB=-60V VEB=-6V IC=-50mA, IB=-5mA VCE=-6V, IC=-1mA VCE=-12V, IE=-2mA, f=100MHz VCB=-12V, f=1MHz,IE=0 Test Conditions Classification Of hFE Rank Range 5AQ 120 - 270 5AR 180 - 390 5AS 270 - 560 1/3 ISSUED DATE :2005/02/18 REVISED DATE : Characteristics Curve 2/3 ISSUED DATE :2005/02/18 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 3/3 |
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